Vishay Semiconductor Diodes Division - S3BHE3_A/I

KEY Part #: K6427304

S3BHE3_A/I Pricing (USD) [495660PC Stock]

  • 1 pcs$0.07462
  • 3,500 pcs$0.06823

Nimewo Pati:
S3BHE3_A/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 100V 3A DO214AB. Rectifiers 3A 100V 100A@8.3ms Single Die Auto
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Diodes - Bridge rèktifikateur, Diodes - Zener - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single, Tiristors - SCR - Modil yo and Diodes - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division S3BHE3_A/I electronic components. S3BHE3_A/I can be shipped within 24 hours after order. If you have any demands for S3BHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S3BHE3_A/I Atribi pwodwi yo

Nimewo Pati : S3BHE3_A/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 100V 3A DO214AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 2.5A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2.5µs
Kouran - Fèy Reverse @ Vr : 10µA @ 100V
Kapasite @ Vr, F : 60pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AB, SMC
Pake Aparèy Founisè : DO-214AB (SMC)
Operating Tanperati - Junction : -55°C ~ 150°C

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