Microsemi Corporation - APTGT200DA120D3G

KEY Part #: K6533109

APTGT200DA120D3G Pricing (USD) [1165PC Stock]

  • 1 pcs$37.14864
  • 100 pcs$35.24754

Nimewo Pati:
APTGT200DA120D3G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 1200V 300A 1050W D3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTGT200DA120D3G Atribi pwodwi yo

Nimewo Pati : APTGT200DA120D3G
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 1200V 300A 1050W D3
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 300A
Pouvwa - Max : 1050W
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 200A
Kouran - Cutoff Pèseptè (Max) : 6mA
Antre kapasite (Cies) @ Vce : 14nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : D-3 Module
Pake Aparèy Founisè : D3