S1AFJ-M3/6B Pricing (USD) [1160314PC Stock]
- 1 pcs$0.03364
- 14,000 pcs$0.03347
- Nimewo Pati:
- S1AFJ-M3/6B
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 600V 1A DO221AC. Rectifiers 1A, 600V, SLIM SMA, STD GPP, SM RECT
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Objektif espesyal and Diodes - Bridge rèktifikateur ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division S1AFJ-M3/6B electronic components. S1AFJ-M3/6B can be shipped within 24 hours after order. If you have any demands for S1AFJ-M3/6B, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
S1AFJ-M3/6B Atribi pwodwi yo
Nimewo Pati :
S1AFJ-M3/6B
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 600V 1A DO221AC
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
600V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 1A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
1.47µs
Kouran - Fèy Reverse @ Vr :
5µA @ 600V
Kapasite @ Vr, F :
7.9pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-221AC, SMA Flat Leads
Pake Aparèy Founisè :
DO-221AC (SlimSMA)
Operating Tanperati - Junction :
-55°C ~ 150°C
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