Vishay Semiconductor Diodes Division - VS-10ETF10-M3

KEY Part #: K6434629

VS-10ETF10-M3 Pricing (USD) [41074PC Stock]

  • 1 pcs$0.95192
  • 1,000 pcs$0.85848

Nimewo Pati:
VS-10ETF10-M3
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1KV 10A TO220AC. Schottky Diodes & Rectifiers New Input Diodes - TO-220-e3
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - RF, Diodes - Rèkteur - Single, Transistors - IGBTs - Modil yo, Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division VS-10ETF10-M3 electronic components. VS-10ETF10-M3 can be shipped within 24 hours after order. If you have any demands for VS-10ETF10-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-10ETF10-M3 Atribi pwodwi yo

Nimewo Pati : VS-10ETF10-M3
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1KV 10A TO220AC
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 1.33V @ 10A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 310ns
Kouran - Fèy Reverse @ Vr : 100µA @ 1000V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-2
Pake Aparèy Founisè : TO-220AC
Operating Tanperati - Junction : -40°C ~ 150°C

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