BUK9M28-80EX Pricing (USD) [302080PC Stock]
- 1 pcs$0.12244
- 1,500 pcs$0.10768
- Nimewo Pati:
- BUK9M28-80EX
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 80V 33A LFPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - JFETs, Transistors - IGBTs - Single, Tiristors - SCR, Diodes - RF, Transistors - Objektif espesyal, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modil yo and Tiristors - SCR - Modil yo ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. BUK9M28-80EX electronic components. BUK9M28-80EX can be shipped within 24 hours after order. If you have any demands for BUK9M28-80EX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BUK9M28-80EX Atribi pwodwi yo
Nimewo Pati :
BUK9M28-80EX
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 80V 33A LFPAK
Seri :
Automotive, AEC-Q101, TrenchMOS™
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
80V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
33A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
5V
RD sou (Max) @ Id, Vgs :
25 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs :
16.7nC @ 5V
Vgs (Max) :
±10V
Antre kapasite (Ciss) (Max) @ Vds :
2275pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
75W (Tc)
Operating Tanperati :
-55°C ~ 175°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
LFPAK33
Pake / Ka :
SOT-1210, 8-LFPAK33
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