BAV21W-HE3-18 Pricing (USD) [2192764PC Stock]
- 1 pcs$0.01687
- 10,000 pcs$0.01560
- Nimewo Pati:
- BAV21W-HE3-18
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 200V 250MA SOD123. Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - DIACs, SIDACs, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single and Transistors - FETs, MOSFETs - Single ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division BAV21W-HE3-18 electronic components. BAV21W-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAV21W-HE3-18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BAV21W-HE3-18 Atribi pwodwi yo
Nimewo Pati :
BAV21W-HE3-18
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 200V 250MA SOD123
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
250mA (DC)
Voltage - Forward (Vf) (Max) @ Si :
1V @ 100mA
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
100nA @ 150V
Kapasite @ Vr, F :
1.5pF @ 0V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
SOD-123
Pake Aparèy Founisè :
SOD-123
Operating Tanperati - Junction :
175°C (Max)
Dènye nouvèl
Ou ka enterese tou
-
BAS19
ON Semiconductor
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
-
MMBD4448
ON Semiconductor
DIODE GEN PURP 75V 200MA SOT23-3. Diodes - General Purpose, Power, Switching Hi Conductance Fast
-
MMBD1501A
ON Semiconductor
DIODE GEN PURP 200V 200MA SOT23. Diodes - General Purpose, Power, Switching High Voltage General Purpose
-
BAS29
ON Semiconductor
DIODE GEN PURP 120V 200MA SOT23. Diodes - General Purpose, Power, Switching 120V 200mA
-
BAV20W-E3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 250MA SOD123. Diodes - General Purpose, Power, Switching 200V 625mA 1A IFSM
-
1N4148W-HE3-18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 75V 150MA SOD123. Diodes - General Purpose, Power, Switching 100 Volt 500mA 4ns
Pati cho
- BYV29B-600PJ
- RL104-N-2-3-AP
- 1N3172A
- CMSH2-40M BK
- VI30120SGHM3/4W
- JAN1N1614R
- 1N4946GP-M3/54
- UES2605R
- CD214B-F3150
- SB340S-E3/54
- DSR01S30SC(TPL3)
- RGP02-16EHE3/53
- ES3GHE3/57T
- UF8CT-E3/4W
- S1DA-E3/5AT
- 1N4446_T50R
- HFA08TB60STRR
- PR3005-T
- PR2006G-T
- STTH20R04W
- SIDC73D170E6X1SA2
- CD214A-B240LF
- 10WQ045FN
- MA2711100L
- MMBD914-7
- 10ETF02STRL
- IRKE91/04A
- 30EPF12
- 20ETF02
- BAT42W-7
- SM4933A-TP
- FR154S-TP
- FR604-AP
- GIB1403-E3/81
- SE40PGHM3_A/H
- RN 1ZV
- CDBB3150-G
- PMEG2010AET,215
- 1N4005GPE-E3/54
- BAS16WF