Vishay Semiconductor Diodes Division - BAV21W-HE3-18

KEY Part #: K6439873

BAV21W-HE3-18 Pricing (USD) [2192764PC Stock]

  • 1 pcs$0.01687
  • 10,000 pcs$0.01560

Nimewo Pati:
BAV21W-HE3-18
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 200V 250MA SOD123. Diodes - General Purpose, Power, Switching 250V 625mA 1A IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Zener - Arrays, Diodes - RF, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - Objektif espesyal, Diodes - Zener - Single and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BAV21W-HE3-18 electronic components. BAV21W-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAV21W-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV21W-HE3-18 Atribi pwodwi yo

Nimewo Pati : BAV21W-HE3-18
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 250MA SOD123
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 250mA (DC)
Voltage - Forward (Vf) (Max) @ Si : 1V @ 100mA
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 100nA @ 150V
Kapasite @ Vr, F : 1.5pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : SOD-123
Pake Aparèy Founisè : SOD-123
Operating Tanperati - Junction : 175°C (Max)

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