[2463PC Stock]
- Nimewo Pati:
- PMPB40SNA,115
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- MOSFET N-CH 60V 12.9A 6DFN.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs, Diodes - Zener - Arrays, Tiristors - SCR, Transistors - Bipolè (BJT) - Arrays, Tiristors - TRIACs and Diodes - RF ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMPB40SNA,115 electronic components. PMPB40SNA,115 can be shipped within 24 hours after order. If you have any demands for PMPB40SNA,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMPB40SNA,115 Atribi pwodwi yo
Nimewo Pati :
PMPB40SNA,115
Manifakti :
Nexperia USA Inc.
Deskripsyon :
MOSFET N-CH 60V 12.9A 6DFN
Seri :
-
Estati Pati :
Obsolete
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
12.9A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
4.5V, 10V
RD sou (Max) @ Id, Vgs :
43 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
24nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
612pF @ 30V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
1.7W (Ta), 12.5W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
DFN2020MD-6
Pake / Ka :
6-UDFN Exposed Pad
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