Vishay Semiconductor Diodes Division - RS1KHE3_A/H

KEY Part #: K6432813

RS1KHE3_A/H Pricing (USD) [854622PC Stock]

  • 1 pcs$0.04328
  • 7,200 pcs$0.04003

Nimewo Pati:
RS1KHE3_A/H
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 800V 1A DO214AC. Rectifiers 800 Volt 1.0A 500ns 30 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - DIACs, SIDACs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Diodes - RF, Tiristors - SCR - Modil yo and Diodes - Bridge rèktifikateur ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division RS1KHE3_A/H electronic components. RS1KHE3_A/H can be shipped within 24 hours after order. If you have any demands for RS1KHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RS1KHE3_A/H Atribi pwodwi yo

Nimewo Pati : RS1KHE3_A/H
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 800V 1A DO214AC
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 800V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 500ns
Kouran - Fèy Reverse @ Vr : 5µA @ 800V
Kapasite @ Vr, F : 7pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : DO-214AC (SMA)
Operating Tanperati - Junction : -55°C ~ 150°C

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