Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
PHOTOVOLTAIC 3.75KV BV SO6 12
Voltage - Izolasyon :
3750Vrms
Pwopòsyon Transfè Kouran (Min) :
-
Pwopòsyon aktyèl transfè (Max) :
-
Vire sou / Vire Off Tan (Tip) :
200µs, 300µs
Rise / Fall Time (Tip) :
-
Kalite Sòti :
Photovoltaic
Voltage - Sòti (Max) :
7V
Kouran - Sòti / Chèn :
30µA (Typ)
Voltage - Forward (Vf) (Tip) :
1.65V
Kouran - DC Forward (Si) (Max) :
30mA
Operating Tanperati :
-40°C ~ 125°C
Mounting Kalite :
Surface Mount
Pake / Ka :
6-SOIC (0.179", 4.55mm Width), 4 Leads
Pake Aparèy Founisè :
6-SO, 4 Lead