WeEn Semiconductors - BYV430J-600PQ

KEY Part #: K6475474

[6088PC Stock]


    Nimewo Pati:
    BYV430J-600PQ
    Manifakti:
    WeEn Semiconductors
    Detaye deskripsyon:
    DIODE ARRAY GP 600V 30A TO3P. Rectifiers BYV430J-600PQ/TO3PF/STANDARD M
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Transistors - Pwogramasyon Unijunction, Tiristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Bridge rèktifikateur, Transistors - Bipolè (BJT) - Arrays and Tiristors - DIACs, SIDACs ...
    Avantaj konpetitif:
    We specialize in WeEn Semiconductors BYV430J-600PQ electronic components. BYV430J-600PQ can be shipped within 24 hours after order. If you have any demands for BYV430J-600PQ, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BYV430J-600PQ Atribi pwodwi yo

    Nimewo Pati : BYV430J-600PQ
    Manifakti : WeEn Semiconductors
    Deskripsyon : DIODE ARRAY GP 600V 30A TO3P
    Seri : -
    Estati Pati : Active
    Konfigirasyon dyòd : 1 Pair Common Cathode
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 600V
    Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 30A
    Voltage - Forward (Vf) (Max) @ Si : 2V @ 30A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 90ns
    Kouran - Fèy Reverse @ Vr : 10µA @ 600V
    Operating Tanperati - Junction : 175°C (Max)
    Mounting Kalite : Through Hole
    Pake / Ka : TO-3P-3, SC-65-3
    Pake Aparèy Founisè : TO-3P
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