Infineon Technologies - IDB12E120ATMA1

KEY Part #: K6445500

[2087PC Stock]


    Nimewo Pati:
    IDB12E120ATMA1
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    DIODE GEN PURP 1.2KV 28A TO263-3.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - JFETs and Tiristors - SCR ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies IDB12E120ATMA1 electronic components. IDB12E120ATMA1 can be shipped within 24 hours after order. If you have any demands for IDB12E120ATMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IDB12E120ATMA1 Atribi pwodwi yo

    Nimewo Pati : IDB12E120ATMA1
    Manifakti : Infineon Technologies
    Deskripsyon : DIODE GEN PURP 1.2KV 28A TO263-3
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 1200V
    Kouran - Mwayèn Rèktifye (Io) : 28A (DC)
    Voltage - Forward (Vf) (Max) @ Si : 2.15V @ 12A
    Vitès : Fast Recovery =< 500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 150ns
    Kouran - Fèy Reverse @ Vr : 100µA @ 1200V
    Kapasite @ Vr, F : -
    Mounting Kalite : Surface Mount
    Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Pake Aparèy Founisè : PG-TO263-3-2
    Operating Tanperati - Junction : -55°C ~ 150°C

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