IXTY02N50D Pricing (USD) [28512PC Stock]
- 1 pcs$2.17265
- 10 pcs$1.93908
- 100 pcs$1.59005
- 500 pcs$1.28755
- 1,000 pcs$1.03020
- Nimewo Pati:
- IXTY02N50D
- Manifakti:
- IXYS
- Detaye deskripsyon:
- MOSFET N-CH 500V 0.2A DPAK.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Zener - Single, Transistors - IGBTs - Arrays, Tiristors - TRIACs, Tiristors - DIACs, SIDACs, Diodes - Bridge rèktifikateur, Transistors - Objektif espesyal and Diodes - Zener - Arrays ...
- Avantaj konpetitif:
- We specialize in IXYS IXTY02N50D electronic components. IXTY02N50D can be shipped within 24 hours after order. If you have any demands for IXTY02N50D, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTY02N50D Atribi pwodwi yo
Nimewo Pati :
IXTY02N50D
Manifakti :
IXYS
Deskripsyon :
MOSFET N-CH 500V 0.2A DPAK
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
500V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
200mA (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
-
RD sou (Max) @ Id, Vgs :
30 Ohm @ 50mA, 0V
Vgs (th) (Max) @ Id :
-
Chaje Gate (Qg) (Max) @ Vgs :
-
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
120pF @ 25V
Karakteristik FET :
Depletion Mode
Disipasyon Pouvwa (Max) :
1.1W (Ta), 25W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-252, (D-Pak)
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
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