Nimewo Pati :
H11A817B300
Manifakti :
ON Semiconductor
Deskripsyon :
OPTOISO 5.3KV TRANSISTOR 4DIP
Voltage - Izolasyon :
5300Vrms
Pwopòsyon Transfè Kouran (Min) :
130% @ 5mA
Pwopòsyon aktyèl transfè (Max) :
260% @ 5mA
Vire sou / Vire Off Tan (Tip) :
-
Rise / Fall Time (Tip) :
2.4µs, 2.4µs
Voltage - Sòti (Max) :
70V
Kouran - Sòti / Chèn :
50mA
Voltage - Forward (Vf) (Tip) :
1.2V
Kouran - DC Forward (Si) (Max) :
50mA
Vce saturation (Max) :
200mV
Operating Tanperati :
-55°C ~ 100°C
Mounting Kalite :
Through Hole
Pake / Ka :
4-DIP (0.300", 7.62mm)
Pake Aparèy Founisè :
4-DIP