Central Semiconductor Corp - 1N4007GPP BK

KEY Part #: K6441861

[3331PC Stock]


    Nimewo Pati:
    1N4007GPP BK
    Manifakti:
    Central Semiconductor Corp
    Detaye deskripsyon:
    DIODE GEN PURP 1KV 1A DO41.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - Bipolè (BJT) - RF, Diodes - Rèkteur - Single and Tiristors - DIACs, SIDACs ...
    Avantaj konpetitif:
    We specialize in Central Semiconductor Corp 1N4007GPP BK electronic components. 1N4007GPP BK can be shipped within 24 hours after order. If you have any demands for 1N4007GPP BK, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    1N4007GPP BK Atribi pwodwi yo

    Nimewo Pati : 1N4007GPP BK
    Manifakti : Central Semiconductor Corp
    Deskripsyon : DIODE GEN PURP 1KV 1A DO41
    Seri : -
    Estati Pati : Obsolete
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 1000V
    Kouran - Mwayèn Rèktifye (Io) : 1A
    Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
    Vitès : Standard Recovery >500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : 2µs
    Kouran - Fèy Reverse @ Vr : 5µA @ 1000V
    Kapasite @ Vr, F : 8pF @ 4V, 1MHz
    Mounting Kalite : Through Hole
    Pake / Ka : DO-204AL, DO-41, Axial
    Pake Aparèy Founisè : DO-41
    Operating Tanperati - Junction : -65°C ~ 175°C
    Ou ka enterese tou
    • CDBDSC3650-G

      Comchip Technology

      DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 3A 650V

    • CDBDSC51200-G

      Comchip Technology

      DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 5A 1200V

    • VS-30EPH06-N3

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 600V 30A TO247AC. Rectifiers 30A 600V Hyperfast

    • VS-E4PU6006L-N3

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 600V 60A TO247AD. Rectifiers 600V 60A FRED Pt TO-247 LL 2L

    • VS-60APU06PBF

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 600V 60A TO247AC. Rectifiers 600 Volt 60 Amp

    • VS-60APH03-N3

      Vishay Semiconductor Diodes Division

      DIODE GEN PURP 300V 60A TO247AC. Rectifiers 60A 300V Hyperfast 28ns FRED Pt