Taiwan Semiconductor Corporation - HS3JB M4G

KEY Part #: K6426712

HS3JB M4G Pricing (USD) [739065PC Stock]

  • 1 pcs$0.05005

Nimewo Pati:
HS3JB M4G
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 600V 3A DO214AA. Rectifiers 75ns 3A 600V Hi Eff Recov Rectifier
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Rèkteur - Arrays, Diodes - Zener - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Tiristors - SCR, Diodes - Rèkteur - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays and Diodes - RF ...
Avantaj konpetitif:
We specialize in Taiwan Semiconductor Corporation HS3JB M4G electronic components. HS3JB M4G can be shipped within 24 hours after order. If you have any demands for HS3JB M4G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HS3JB M4G Atribi pwodwi yo

Nimewo Pati : HS3JB M4G
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 600V 3A DO214AA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 3A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 75ns
Kouran - Fèy Reverse @ Vr : 10µA @ 600V
Kapasite @ Vr, F : 50pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AA, SMB
Pake Aparèy Founisè : DO-214AA (SMB)
Operating Tanperati - Junction : -55°C ~ 150°C

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