Infineon Technologies - BA885E6327HTSA1

KEY Part #: K6464368

BA885E6327HTSA1 Pricing (USD) [9856PC Stock]

  • 3,000 pcs$0.04157

Nimewo Pati:
BA885E6327HTSA1
Manifakti:
Infineon Technologies
Detaye deskripsyon:
RF DIODE PIN 50V SOT23-3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Diodes - Rèkteur - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BA885E6327HTSA1 Atribi pwodwi yo

Nimewo Pati : BA885E6327HTSA1
Manifakti : Infineon Technologies
Deskripsyon : RF DIODE PIN 50V SOT23-3
Seri : -
Estati Pati : Obsolete
Kalite dyòd : PIN - Single
Voltage - Peak Ranvèse (Max) : 50V
Kouran - Max : 50mA
Kapasite @ Vr, F : 0.6pF @ 10V, 1MHz
Rezistans @ Si, F : 7 Ohm @ 10mA, 100MHz
Disipasyon Pouvwa (Max) : -
Operating Tanperati : 150°C (TJ)
Pake / Ka : TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè : SOT-23-3