VS-FB190SA10 Pricing (USD) [3077PC Stock]
- 1 pcs$13.40790
- 10 pcs$12.36594
- 25 pcs$11.81026
- 100 pcs$10.55981
- 250 pcs$10.07348
- Nimewo Pati:
- VS-FB190SA10
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- MOSFET N-CH 100V 190A SOT227.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - Bipolè (BJT) - RF, Diodes - Zener - Single, Diodes - RF, Modil pouvwa chofè, Diodes - Bridge rèktifikateur, Transistors - Pwogramasyon Unijunction and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division VS-FB190SA10 electronic components. VS-FB190SA10 can be shipped within 24 hours after order. If you have any demands for VS-FB190SA10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-FB190SA10 Atribi pwodwi yo
Nimewo Pati :
VS-FB190SA10
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
MOSFET N-CH 100V 190A SOT227
Seri :
-
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
190A
Drive Voltage (Max Rds Sou, Min RDS Sou) :
10V
RD sou (Max) @ Id, Vgs :
6.5 mOhm @ 180A, 10V
Vgs (th) (Max) @ Id :
4.35V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
250nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
10700pF @ 25V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
568W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SOT-227
Pake / Ka :
SOT-227-4, miniBLOC
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