SBR2M30P1-7 Pricing (USD) [490925PC Stock]
- 1 pcs$0.07534
- 3,000 pcs$0.06743
- 6,000 pcs$0.06308
- 15,000 pcs$0.05873
- 30,000 pcs$0.05569
- Nimewo Pati:
- SBR2M30P1-7
- Manifakti:
- Diodes Incorporated
- Detaye deskripsyon:
- DIODE SBR 30V 2A POWERDI123. Schottky Diodes & Rectifiers 2A 30V Ultralow IR
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - RF, Tiristors - DIACs, SIDACs, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Single, Tiristors - TRIACs and Modil pouvwa chofè ...
- Avantaj konpetitif:
- We specialize in Diodes Incorporated SBR2M30P1-7 electronic components. SBR2M30P1-7 can be shipped within 24 hours after order. If you have any demands for SBR2M30P1-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SBR2M30P1-7 Atribi pwodwi yo
Nimewo Pati :
SBR2M30P1-7
Manifakti :
Diodes Incorporated
Deskripsyon :
DIODE SBR 30V 2A POWERDI123
Seri :
SBR®
Estati Pati :
Active
Kalite dyòd :
Super Barrier
Voltage - DC Ranvèse (Vr) (Max) :
30V
Kouran - Mwayèn Rèktifye (Io) :
2A
Voltage - Forward (Vf) (Max) @ Si :
460mV @ 2A
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
-
Kouran - Fèy Reverse @ Vr :
200µA @ 30V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
POWERDI®123
Pake Aparèy Founisè :
PowerDI™ 123
Operating Tanperati - Junction :
-65°C ~ 175°C
Dènye nouvèl
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