Diodes Incorporated - HBDM60V600W-7

KEY Part #: K6392446

HBDM60V600W-7 Pricing (USD) [773543PC Stock]

  • 1 pcs$0.04782
  • 3,000 pcs$0.04307
  • 6,000 pcs$0.04046
  • 15,000 pcs$0.03785
  • 30,000 pcs$0.03472

Nimewo Pati:
HBDM60V600W-7
Manifakti:
Diodes Incorporated
Detaye deskripsyon:
TRANS NPN/PNP 65V/60V SOT363.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Transistors - Pwogramasyon Unijunction, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - SCR, Diodes - RF, Transistors - JFETs, Diodes - Rèkteur - Single and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
We specialize in Diodes Incorporated HBDM60V600W-7 electronic components. HBDM60V600W-7 can be shipped within 24 hours after order. If you have any demands for HBDM60V600W-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HBDM60V600W-7 Atribi pwodwi yo

Nimewo Pati : HBDM60V600W-7
Manifakti : Diodes Incorporated
Deskripsyon : TRANS NPN/PNP 65V/60V SOT363
Seri : -
Estati Pati : Active
Kalite tranzistò : NPN, PNP
Kouran - Pèseptè (Ic) (Max) : 500mA, 600mA
Voltage - Pèseptè ki emèt deba (Max) : 65V, 60V
Vce saturation (Max) @ Ib, Ic : 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Kouran - Cutoff Pèseptè (Max) : 100nA
DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 100 @ 100mA, 1V / 100 @ 150mA, 10V
Pouvwa - Max : 200mW
Frekans - Tranzisyon : 100MHz
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè : SOT-363

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