Vishay Semiconductor Diodes Division - 1N6484HE3/97

KEY Part #: K6457833

1N6484HE3/97 Pricing (USD) [704650PC Stock]

  • 1 pcs$0.05249
  • 10,000 pcs$0.04757

Nimewo Pati:
1N6484HE3/97
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 1KV 1A DO213AB. Rectifiers 1000 Volt 1.0 Amp 30 Amp IFSM
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
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Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division 1N6484HE3/97 electronic components. 1N6484HE3/97 can be shipped within 24 hours after order. If you have any demands for 1N6484HE3/97, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N6484HE3/97 Atribi pwodwi yo

Nimewo Pati : 1N6484HE3/97
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 1KV 1A DO213AB
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 1000V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 10µA @ 1000V
Kapasite @ Vr, F : 8pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AB, MELF (Glass)
Pake Aparèy Founisè : DO-213AB
Operating Tanperati - Junction : -65°C ~ 175°C

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