Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
IGBT SIP MODULE 600V 9A IMS-2
Nou konte genyen :
Three Phase Inverter
Voltage - Pèseptè ki emèt deba (Max) :
600V
Kouran - Pèseptè (Ic) (Max) :
16A
Vce (sou) (Max) @ Vge, Ic :
1.63V @ 15V, 16A
Kouran - Cutoff Pèseptè (Max) :
250µA
Antre kapasite (Cies) @ Vce :
1.1nF @ 30V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake / Ka :
19-SIP (13 Leads), IMS-2
Pake Aparèy Founisè :
IMS-2