Manifakti :
GeneSiC Semiconductor
Deskripsyon :
BRIDGE RECT 1PHASE 800V 10A GBU
Kalite dyòd :
Single Phase
Voltage - Peak Ranvèse (Max) :
800V
Kouran - Mwayèn Rèktifye (Io) :
10A
Voltage - Forward (Vf) (Max) @ Si :
1.1V @ 10A
Kouran - Fèy Reverse @ Vr :
5µA @ 800V
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
GBU