Nimewo Pati :
2EDS8265HXUMA1
Manifakti :
Infineon Technologies
Kondwi konte genyen :
Half-Bridge
Kalite Chèn :
Independent
Kalite Gate :
N-Channel, P-Channel MOSFET
Voltage - Pwovizyon pou :
3V ~ 3.5V
Vòltaj lojik - VIL, VIH :
1.2V, 2V
Kouran - Peak Sòti (Sous, Lavabo) :
4A, 8A
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
-
Rise / Fall Time (Tip) :
6.5ns, 4.5ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
16-SOIC (0.295", 7.50mm Width)
Pake Aparèy Founisè :
PG-DSO-16-30