Nimewo Pati :
1EDN7511BXUSA1
Manifakti :
Infineon Technologies
Kondwi konte genyen :
Half-Bridge, Low-Side
Kalite Gate :
N-Channel, P-Channel MOSFET
Voltage - Pwovizyon pou :
4.5V ~ 20V
Vòltaj lojik - VIL, VIH :
1.2V, 1.9V
Kouran - Peak Sòti (Sous, Lavabo) :
4A, 8A
Kalite Antre :
Inverting, Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
-
Rise / Fall Time (Tip) :
6.5ns, 4.5ns
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PG-SOT23-6-2