RGF1M-E3/67A Pricing (USD) [550125PC Stock]
- 1 pcs$0.07095
- 1,500 pcs$0.07060
- 3,000 pcs$0.06437
- 7,500 pcs$0.06021
- 10,500 pcs$0.05606
- Nimewo Pati:
- RGF1M-E3/67A
- Manifakti:
- Vishay Semiconductor Diodes Division
- Detaye deskripsyon:
- DIODE GEN PURP 1KV 1A DO214BA. Diodes - General Purpose, Power, Switching 1 Amp 1000Volt 500ns 30 Amp IFSM
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single, Diodes - Varyab kapasite (Varicaps, Varactors), Tiristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - RF and Diodes - Rèkteur - Arrays ...
- Avantaj konpetitif:
- We specialize in Vishay Semiconductor Diodes Division RGF1M-E3/67A electronic components. RGF1M-E3/67A can be shipped within 24 hours after order. If you have any demands for RGF1M-E3/67A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGF1M-E3/67A Atribi pwodwi yo
Nimewo Pati :
RGF1M-E3/67A
Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 1KV 1A DO214BA
Seri :
SUPERECTIFIER®
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
1000V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
500ns
Kouran - Fèy Reverse @ Vr :
5µA @ 1000V
Kapasite @ Vr, F :
8.5pF @ 4V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
DO-214BA
Pake Aparèy Founisè :
DO-214BA (GF1)
Operating Tanperati - Junction :
-65°C ~ 175°C
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