Infineon Technologies - SIDC53D120H6X1SA3

KEY Part #: K6449918

[577PC Stock]


    Nimewo Pati:
    SIDC53D120H6X1SA3
    Manifakti:
    Infineon Technologies
    Detaye deskripsyon:
    DIODE GEN PURP 1.2KV 100A WAFER.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - IGBTs - Single, Diodes - Zener - Single, Modil pouvwa chofè, Diodes - Zener - Arrays, Tiristors - SCR, Diodes - Rèkteur - Arrays and Transistors - Objektif espesyal ...
    Avantaj konpetitif:
    We specialize in Infineon Technologies SIDC53D120H6X1SA3 electronic components. SIDC53D120H6X1SA3 can be shipped within 24 hours after order. If you have any demands for SIDC53D120H6X1SA3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIDC53D120H6X1SA3 Atribi pwodwi yo

    Nimewo Pati : SIDC53D120H6X1SA3
    Manifakti : Infineon Technologies
    Deskripsyon : DIODE GEN PURP 1.2KV 100A WAFER
    Seri : -
    Estati Pati : Discontinued at Digi-Key
    Kalite dyòd : Standard
    Voltage - DC Ranvèse (Vr) (Max) : 1200V
    Kouran - Mwayèn Rèktifye (Io) : 100A (DC)
    Voltage - Forward (Vf) (Max) @ Si : 1.6V @ 100A
    Vitès : Standard Recovery >500ns, > 200mA (Io)
    Ranvèse Tan Reverse (trr) : -
    Kouran - Fèy Reverse @ Vr : 27µA @ 1200V
    Kapasite @ Vr, F : -
    Mounting Kalite : Surface Mount
    Pake / Ka : Die
    Pake Aparèy Founisè : Sawn on foil
    Operating Tanperati - Junction : -55°C ~ 150°C

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