Taiwan Semiconductor Corporation - GPAS1007 MNG

KEY Part #: K6430209

GPAS1007 MNG Pricing (USD) [358318PC Stock]

  • 1 pcs$0.10323

Nimewo Pati:
GPAS1007 MNG
Manifakti:
Taiwan Semiconductor Corporation
Detaye deskripsyon:
DIODE GEN PURP 10A TO263AB.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Modil pouvwa chofè, Transistors - Bipolè (BJT) - RF, Transistors - Bipolè (BJT) - Single, Transistors - IGBTs - Arrays, Diodes - Rèkteur - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Objektif espesyal and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Taiwan Semiconductor Corporation GPAS1007 MNG electronic components. GPAS1007 MNG can be shipped within 24 hours after order. If you have any demands for GPAS1007 MNG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GPAS1007 MNG Atribi pwodwi yo

Nimewo Pati : GPAS1007 MNG
Manifakti : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 10A TO263AB
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : -
Kouran - Mwayèn Rèktifye (Io) : 10A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 10A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 5µA @ 1000V
Kapasite @ Vr, F : 50pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pake Aparèy Founisè : TO-263AB (D²PAK)
Operating Tanperati - Junction : -55°C ~ 150°C

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