PMEG2010BELD,315 Pricing (USD) [1771238PC Stock]
- 1 pcs$0.04248
- 10,000 pcs$0.04227
- 30,000 pcs$0.03877
- 50,000 pcs$0.03731
- Nimewo Pati:
- PMEG2010BELD,315
- Manifakti:
- Nexperia USA Inc.
- Detaye deskripsyon:
- DIODE SCHOTTKY 20V 1A SOD882. Schottky Diodes & Rectifiers 20V 0.5A low VF MEGA Barrier Rectifier
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Diodes - Zener - Single, Transistors - Bipolè (BJT) - RF, Tiristors - SCR, Diodes - RF, Tiristors - DIACs, SIDACs, Diodes - Rèkteur - Single, Transistors - Bipolè (BJT) - Single and Transistors - Bipolè (BJT) - Arrays, Pre-partial ...
- Avantaj konpetitif:
- We specialize in Nexperia USA Inc. PMEG2010BELD,315 electronic components. PMEG2010BELD,315 can be shipped within 24 hours after order. If you have any demands for PMEG2010BELD,315, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMEG2010BELD,315 Atribi pwodwi yo
Nimewo Pati :
PMEG2010BELD,315
Manifakti :
Nexperia USA Inc.
Deskripsyon :
DIODE SCHOTTKY 20V 1A SOD882
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Schottky
Voltage - DC Ranvèse (Vr) (Max) :
20V
Kouran - Mwayèn Rèktifye (Io) :
1A
Voltage - Forward (Vf) (Max) @ Si :
490mV @ 1A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
1.6ns
Kouran - Fèy Reverse @ Vr :
200µA @ 20V
Kapasite @ Vr, F :
40pF @ 1V, 1MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
SOD-882
Pake Aparèy Founisè :
DFN1006-2
Operating Tanperati - Junction :
150°C (Max)
Dènye nouvèl
Ou ka enterese tou
-
-
VS-16EDH02HM3/I
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 16A TO263AC. Rectifiers Single 16A 200V FRED Pt AEC-Q101
-
FESB8BTHE3/81
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 8A TO263AB. Rectifiers 8.0A 100 Volt 35ns 125 Amp IFSM
-
UGB8CTHE3/81
Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 8A TO263AB. Rectifiers 8.0A 150 Volt 20ns 150 Amp IFSM
-
UGB8DTHE3/81
Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 8A TO263AB. Rectifiers 8.0A 200 Volt 20ns 150 Amp IFSM
-
UGB8ATHE3/81
Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 8A TO263AB. Rectifiers 8.0A 50 Volt 20ns 150 Amp IFSM
Pati cho
- BYV29B-600PJ
- RL104-N-2-3-AP
- 1N3172A
- CMSH2-40M BK
- VI30120SGHM3/4W
- JAN1N1614R
- 1N4946GP-M3/54
- UES2605R
- CD214B-F3150
- SB340S-E3/54
- DSR01S30SC(TPL3)
- RGP02-16EHE3/53
- ES3GHE3/57T
- UF8CT-E3/4W
- S1DA-E3/5AT
- 1N4446_T50R
- HFA08TB60STRR
- PR3005-T
- PR2006G-T
- STTH20R04W
- SIDC73D170E6X1SA2
- CD214A-B240LF
- 10WQ045FN
- MA2711100L
- MMBD914-7
- 10ETF02STRL
- IRKE91/04A
- 30EPF12
- 20ETF02
- BAT42W-7
- SM4933A-TP
- FR154S-TP
- FR604-AP
- GIB1403-E3/81
- SE40PGHM3_A/H
- RN 1ZV
- CDBB3150-G
- PMEG2010AET,215
- 1N4005GPE-E3/54
- BAS16WF