Nimewo Pati :
APTGT75DH120T3G
Manifakti :
Microsemi Corporation
Deskripsyon :
MOD IGBT 1200V 110A SP3
Kalite IGBT :
Trench Field Stop
Nou konte genyen :
Asymmetrical Bridge
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
110A
Vce (sou) (Max) @ Vge, Ic :
2.1V @ 15V, 75A
Kouran - Cutoff Pèseptè (Max) :
250µA
Antre kapasite (Cies) @ Vce :
5.34nF @ 25V
Operating Tanperati :
-40°C ~ 150°C (TJ)
Mounting Kalite :
Chassis Mount
Pake Aparèy Founisè :
SP3