Microsemi Corporation - APTGT75DH120T3G

KEY Part #: K6533099

APTGT75DH120T3G Pricing (USD) [1817PC Stock]

  • 1 pcs$23.81987
  • 100 pcs$23.18835

Nimewo Pati:
APTGT75DH120T3G
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
MOD IGBT 1200V 110A SP3.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Diodes - RF, Transistors - FETs, MOSFETs - Single and Transistors - Bipolè (BJT) - Arrays ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APTGT75DH120T3G Atribi pwodwi yo

Nimewo Pati : APTGT75DH120T3G
Manifakti : Microsemi Corporation
Deskripsyon : MOD IGBT 1200V 110A SP3
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Nou konte genyen : Asymmetrical Bridge
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 110A
Pouvwa - Max : 357W
Vce (sou) (Max) @ Vge, Ic : 2.1V @ 15V, 75A
Kouran - Cutoff Pèseptè (Max) : 250µA
Antre kapasite (Cies) @ Vce : 5.34nF @ 25V
Antre : Standard
NTC thermistor : Yes
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SP3
Pake Aparèy Founisè : SP3