Vishay Semiconductor Diodes Division - SE50PAJ-M3/I

KEY Part #: K6428672

SE50PAJ-M3/I Pricing (USD) [477636PC Stock]

  • 1 pcs$0.07744
  • 3,500 pcs$0.07081
  • 7,000 pcs$0.06624
  • 10,500 pcs$0.06167
  • 24,500 pcs$0.06091

Nimewo Pati:
SE50PAJ-M3/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE GEN PURP 600V 1.6A DO221BC. Rectifiers 5A, 600V, ESD PROTECTION, SMPA
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Single, Transistors - FETs, MOSFETs - RF, Tiristors - TRIACs, Transistors - Pwogramasyon Unijunction, Transistors - FETs, MOSFETs - Arrays, Diodes - RF and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division SE50PAJ-M3/I electronic components. SE50PAJ-M3/I can be shipped within 24 hours after order. If you have any demands for SE50PAJ-M3/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SE50PAJ-M3/I Atribi pwodwi yo

Nimewo Pati : SE50PAJ-M3/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 1.6A DO221BC
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 1.6A (DC)
Voltage - Forward (Vf) (Max) @ Si : 940mV @ 2.5A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 2µs
Kouran - Fèy Reverse @ Vr : 10µA @ 600V
Kapasite @ Vr, F : 32pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-221BC, SMA Flat Leads Exposed Pad
Pake Aparèy Founisè : DO-221BC (SMPA)
Operating Tanperati - Junction : -55°C ~ 175°C

Ou ka enterese tou
  • CDSV-20-G

    Comchip Technology

    DIODE GEN PURP 150V 200MA SOD323. Diodes - General Purpose, Power, Switching 150V 200mA 200mW

  • CDBV140-G

    Comchip Technology

    DIODE SCHOTTKY 40V 1A SOD323. Schottky Diodes & Rectifiers VR=40V IO=1A

  • CDBV120-G

    Comchip Technology

    DIODE SCHOTTKY 20V 1A SOD323. Schottky Diodes & Rectifiers VR=20V IO=1A

  • VS-3EJH02HM3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 3A DO221AC. Rectifiers Hyperfst 3A 200V Fred Pt Rfr AEC-Q101

  • VS-2EJH01HM3/6A

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 2A DO221AC. Rectifiers Hyperfst 2A 100V Fred Pt Rfr AEC-Q101

  • VS-3EJH02-M3/6B

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 3A DO221AC. Rectifiers Hyperfst 3A 200V Fred Pt Rectfr