Manifakti :
Toshiba Semiconductor and Storage
Deskripsyon :
TRANS NPN/PNP PREBIAS 0.2W US6
Kalite tranzistò :
1 NPN, 1 PNP - Pre-Biased (Dual)
Kouran - Pèseptè (Ic) (Max) :
100mA
Voltage - Pèseptè ki emèt deba (Max) :
50V
Rezistans - Sèvi (R1) :
4.7 kOhms
Rezistans - Sèvi ak emeteur (R2) :
4.7 kOhms
DC Kouran Akeri (HFE) (Min) @ Ic, Vce :
30 @ 10mA, 5V
Vce saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Kouran - Cutoff Pèseptè (Max) :
500nA
Frekans - Tranzisyon :
200MHz, 250MHz
Mounting Kalite :
Surface Mount
Pake / Ka :
6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè :
US6