Nimewo Pati :
IDC08S120EX7SA1
Manifakti :
Infineon Technologies
Deskripsyon :
DIODE SCHOTTKY 1.2KV 7.5A WAFER
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
1200V
Kouran - Mwayèn Rèktifye (Io) :
7.5A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.8V @ 7.5A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
180µA @ 1200V
Kapasite @ Vr, F :
380pF @ 1V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
Sawn on foil
Operating Tanperati - Junction :
-55°C ~ 175°C