Manifakti :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 400V 8A TO262
Voltage - DC Ranvèse (Vr) (Max) :
400V
Kouran - Mwayèn Rèktifye (Io) :
8A
Voltage - Forward (Vf) (Max) @ Si :
1.3V @ 8A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
60ns
Kouran - Fèy Reverse @ Vr :
10µA @ 400V
Mounting Kalite :
Through Hole
Pake / Ka :
TO-262-3 Long Leads, I²Pak, TO-262AA
Pake Aparèy Founisè :
TO-262
Operating Tanperati - Junction :
-65°C ~ 175°C