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Si kote ou pa nan lis la, tanpri chwazi youn nan sa ki annapre yo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Lakay
  2. Pwodwi yo
  3. DRAM
  4. eMMC
  5. KLMAG1JETD-B041

Samsung Semiconductor - KLMAG1JETD-B041

KEY Part #: K7360033

[17024PC Stock]

    Nimewo Pati:
    KLMAG1JETD-B041
    Manifakti:
    Samsung Semiconductor
    Detaye deskripsyon:
    eMMC 5.1 16 GB 1.8, 3.3 V / 3.3 V HS400 11.5 x 13 x 0.8 mm -25 ~ 85 °C Mass Production.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: SLC Nand, HBM Aquabolt, HBM Flarebolt, LPDDR3, LPDDR4X, GDDR5, GDDR6 and DDR4 ...
    Avantaj konpetitif:
    We specialize in Samsung Semiconductor KLMAG1JETD-B041 electronic components. KLMAG1JETD-B041 can be shipped within 24 hours after order. If you have any demands for KLMAG1JETD-B041, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    KLMAG1JETD-B041 Atribi pwodwi yo

    Nimewo Pati : KLMAG1JETD-B041
    Manifakti : Samsung Semiconductor
    Deskripsyon : eMMC 5.1 16 GB 1.8, 3.3 V / 3.3 V HS400 11.5 x 13 x 0.8 mm -25 ~ 85 °C Mass Production
    Seri : DDR3
    Version : eMMC 5.1
    dansite : 16 GB
    Voltage : 1.8, 3.3 V / 3.3 V
    Entèfas : HS400
    Pake Kantite moun ki : 11.5 x 13 x 0.8 mm
    Tanperatur. : -25 ~ 85 °C
    pwodwi dènye nouvèl : Mass Production

    Dènye nouvèl

    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Samsung’s PM1733 SSD and High Density DIMMs Support AMD EPYC™ 7002 Series Processor
    Autonomous Driving and the Quest for Safety
    Samsung’s Newest ISOCELL Image Sensor Enables Mobile Devices to ‘Slow Down’ Time
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    The Ultra-Low Latency SSD, Z-SSD
    Inside the building blocks of the 5G future
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    Driving the Artificial Intelligence Evolution with In-Memory Computing
    5G and Memory - from Connected Thinking to Connected Living
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