HER603G B0G Pricing (USD) [417842PC Stock]
- 1 pcs$0.08852
- Nimewo Pati:
- HER603G B0G
- Manifakti:
- Taiwan Semiconductor Corporation
- Detaye deskripsyon:
- DIODE GEN PURP 200V 6A R-6.
- Manufacturer's standard lead time:
- Nan stok
- Lavi etajè:
- Yon ane
- Chip Soti nan:
- Hong Kong
- RoHS:
- Metòd peman:
-
- Chemen chajman:
- Kategori Fanmi yo:
- KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Tiristors - SCR, Transistors - FETs, MOSFETs - RF, Tiristors - DIACs, SIDACs, Transistors - JFETs, Transistors - Objektif espesyal, Transistors - Bipolè (BJT) - Single and Tiristors - TRIACs ...
- Avantaj konpetitif:
- We specialize in Taiwan Semiconductor Corporation HER603G B0G electronic components. HER603G B0G can be shipped within 24 hours after order. If you have any demands for HER603G B0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HER603G B0G Atribi pwodwi yo
Nimewo Pati :
HER603G B0G
Manifakti :
Taiwan Semiconductor Corporation
Deskripsyon :
DIODE GEN PURP 200V 6A R-6
Seri :
-
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
6A
Voltage - Forward (Vf) (Max) @ Si :
1V @ 6A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
50ns
Kouran - Fèy Reverse @ Vr :
10µA @ 200V
Kapasite @ Vr, F :
80pF @ 4V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
R6, Axial
Pake Aparèy Founisè :
R-6
Operating Tanperati - Junction :
-55°C ~ 150°C
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