Vishay Semiconductor Diodes Division - BYG20GHE3_A/I

KEY Part #: K6439673

BYG20GHE3_A/I Pricing (USD) [610930PC Stock]

  • 1 pcs$0.06054
  • 7,500 pcs$0.05536

Nimewo Pati:
BYG20GHE3_A/I
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 400V 1.5A DO214. Rectifiers 1.5A,400V,75nS AVAL AEC-Q101 Qualified
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - TRIACs, Transistors - IGBTs - Arrays, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Tiristors - SCR - Modil yo, Transistors - IGBTs - Modil yo, Transistors - JFETs and Transistors - FETs, MOSFETs - RF ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYG20GHE3_A/I electronic components. BYG20GHE3_A/I can be shipped within 24 hours after order. If you have any demands for BYG20GHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG20GHE3_A/I Atribi pwodwi yo

Nimewo Pati : BYG20GHE3_A/I
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 400V 1.5A DO214
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ Si : 1.4V @ 1.5A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 75ns
Kouran - Fèy Reverse @ Vr : 1µA @ 400V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : DO-214AC (SMA)
Operating Tanperati - Junction : -55°C ~ 150°C

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