Vishay Semiconductor Diodes Division - SM8S10HE3/2D

KEY Part #: K6021820

[890PC Stock]


    Nimewo Pati:
    SM8S10HE3/2D
    Manifakti:
    Vishay Semiconductor Diodes Division
    Detaye deskripsyon:
    TVS DIODE 10V 18.8V DO218AB.
    Manufacturer's standard lead time:
    Nan stok
    Lavi etajè:
    Yon ane
    Chip Soti nan:
    Hong Kong
    RoHS:
    Metòd peman:
    Chemen chajman:
    Kategori Fanmi yo:
    KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Awondisman Awondisman yo, Televizyon - Diodes, Elektrik, Fusion spesyalite, Lighting Pwoteksyon, Pwodwi pou Telefòn, Anvwaye Limitè Kouran (ICL), Ground Fault Circuit Interrupter (GFCI) and Sik Sipresyon IC ...
    Avantaj konpetitif:
    We specialize in Vishay Semiconductor Diodes Division SM8S10HE3/2D electronic components. SM8S10HE3/2D can be shipped within 24 hours after order. If you have any demands for SM8S10HE3/2D, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SM8S10HE3/2D Atribi pwodwi yo

    Nimewo Pati : SM8S10HE3/2D
    Manifakti : Vishay Semiconductor Diodes Division
    Deskripsyon : TVS DIODE 10V 18.8V DO218AB
    Seri : Automotive, AEC-Q101, PAR®
    Estati Pati : Obsolete
    Kalite : Zener
    Chanèl Unidirèksyonèl : 1
    Chanèl bidirèksyonèl yo : -
    Voltage - Ranvèse kanpe (Tip) : 10V
    Vòltaj - Dekonpozisyon (Min) : 11.1V
    Voltage - blocage (Max) @ Ipp : 18.8V
    Kouran - Pik batman (10 / 1000µs) : 351A
    Pouvwa - Peak batman kè : 6600W (6.6kW)
    Pwoteksyon Liy Pouvwa : No
    Aplikasyon : Automotive
    Kapasite @ frekans : -
    Operating Tanperati : -55°C ~ 175°C (TJ)
    Mounting Kalite : Surface Mount
    Pake / Ka : DO-218AB
    Pake Aparèy Founisè : DO-218AB

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