Vishay Semiconductor Diodes Division - G2SBA60-E3/51

KEY Part #: K6541868

G2SBA60-E3/51 Pricing (USD) [12233PC Stock]

  • 1,600 pcs$0.16813

Nimewo Pati:
G2SBA60-E3/51
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
BRIDGE RECT 1PHASE 600V 1.5A GBL.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Pre-partial, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - JFETs, Diodes - Varyab kapasite (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Tiristors - DIACs, SIDACs and Transistors - IGBTs - Arrays ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division G2SBA60-E3/51 electronic components. G2SBA60-E3/51 can be shipped within 24 hours after order. If you have any demands for G2SBA60-E3/51, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

G2SBA60-E3/51 Atribi pwodwi yo

Nimewo Pati : G2SBA60-E3/51
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : BRIDGE RECT 1PHASE 600V 1.5A GBL
Seri : -
Estati Pati : Obsolete
Kalite dyòd : Single Phase
Teknoloji : Standard
Voltage - Peak Ranvèse (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ Si : 1V @ 750mA
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : 4-SIP, GBL
Pake Aparèy Founisè : GBL

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