Manifakti :
GeneSiC Semiconductor
Deskripsyon :
DIODE SCHOTTKY 650V 4.3A TO276
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
4.3A (DC)
Voltage - Forward (Vf) (Max) @ Si :
1.65V @ 5A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
5µA @ 650V
Kapasite @ Vr, F :
274pF @ 1V, 1MHz
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
TO-276
Operating Tanperati - Junction :
-55°C ~ 250°C