Microsemi Corporation - LSM835GE3/TR13

KEY Part #: K6438518

LSM835GE3/TR13 Pricing (USD) [128463PC Stock]

  • 1 pcs$0.29298
  • 3,000 pcs$0.29152

Nimewo Pati:
LSM835GE3/TR13
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE SCHOTTKY 35V 8A DO215AB. Schottky Diodes & Rectifiers Schottky
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Arrays, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - JFETs and Diodes - Varyab kapasite (Varicaps, Varactors) ...
Avantaj konpetitif:
We specialize in Microsemi Corporation LSM835GE3/TR13 electronic components. LSM835GE3/TR13 can be shipped within 24 hours after order. If you have any demands for LSM835GE3/TR13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

LSM835GE3/TR13 Atribi pwodwi yo

Nimewo Pati : LSM835GE3/TR13
Manifakti : Microsemi Corporation
Deskripsyon : DIODE SCHOTTKY 35V 8A DO215AB
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 35V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 520mV @ 8A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 2mA @ 35V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-215AB, SMC Gull Wing
Pake Aparèy Founisè : DO-215AB
Operating Tanperati - Junction : -55°C ~ 150°C

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