NXP USA Inc. - BAP70-04W,115

KEY Part #: K6464433

BAP70-04W,115 Pricing (USD) [644086PC Stock]

  • 1 pcs$0.05743
  • 3,000 pcs$0.05221

Nimewo Pati:
BAP70-04W,115
Manifakti:
NXP USA Inc.
Detaye deskripsyon:
RF DIODE PIN 50V 260MW SOT323-3. PIN Diodes TAPE-7 DIO-RFSS
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Arrays, Transistors - IGBTs - Arrays, Modil pouvwa chofè, Diodes - Zener - Arrays, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Transistors - FETs, MOSFETs - Arrays, Diodes - Bridge rèktifikateur and Diodes - Rèkteur - Single ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAP70-04W,115 Atribi pwodwi yo

Nimewo Pati : BAP70-04W,115
Manifakti : NXP USA Inc.
Deskripsyon : RF DIODE PIN 50V 260MW SOT323-3
Seri : -
Estati Pati : Active
Kalite dyòd : PIN - 1 Pair Series Connection
Voltage - Peak Ranvèse (Max) : 50V
Kouran - Max : 100mA
Kapasite @ Vr, F : 0.3pF @ 20V, 1MHz
Rezistans @ Si, F : 1.9 Ohm @ 100mA, 100MHz
Disipasyon Pouvwa (Max) : 260mW
Operating Tanperati : -65°C ~ 150°C (TJ)
Pake / Ka : SC-70, SOT-323
Pake Aparèy Founisè : SOT-323-3