Nimewo Pati :
SIP41109DY-T1-E3
Manifakti :
Vishay Siliconix
Deskripsyon :
IC DRVR MOSF 1/2BRDG N-CH 8SOIC
Kondwi konte genyen :
Half-Bridge
Kalite Chèn :
Synchronous
Kalite Gate :
N-Channel MOSFET
Voltage - Pwovizyon pou :
10.8V ~ 13.2V
Vòltaj lojik - VIL, VIH :
1V, 4V
Kouran - Peak Sòti (Sous, Lavabo) :
800mA, 1A
Kalite Antre :
Non-Inverting
Segondè Voltage Side - Max (Bootstrap) :
48V
Rise / Fall Time (Tip) :
45ns, 35ns
Operating Tanperati :
-40°C ~ 125°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè :
8-SO