Microsemi Corporation - JAN1N6630US

KEY Part #: K6449551

JAN1N6630US Pricing (USD) [4373PC Stock]

  • 1 pcs$9.95367
  • 100 pcs$9.90415

Nimewo Pati:
JAN1N6630US
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE GEN PURP 900V 1.4A E-MELF. Rectifiers Rectifier
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - Bipolè (BJT) - Single, Tiristors - TRIACs, Diodes - Rèkteur - Single, Diodes - Zener - Single, Transistors - Objektif espesyal, Diodes - Zener - Arrays, Tiristors - SCR - Modil yo and Diodes - RF ...
Avantaj konpetitif:
We specialize in Microsemi Corporation JAN1N6630US electronic components. JAN1N6630US can be shipped within 24 hours after order. If you have any demands for JAN1N6630US, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N6630US Atribi pwodwi yo

Nimewo Pati : JAN1N6630US
Manifakti : Microsemi Corporation
Deskripsyon : DIODE GEN PURP 900V 1.4A E-MELF
Seri : Military, MIL-PRF-19500/590
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 900V
Kouran - Mwayèn Rèktifye (Io) : 1.4A
Voltage - Forward (Vf) (Max) @ Si : 1.4V @ 1.4A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 2µA @ 900V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : SQ-MELF, E
Pake Aparèy Founisè : D-5B
Operating Tanperati - Junction : -65°C ~ 150°C

Ou ka enterese tou
  • C4D08120E

    Cree/Wolfspeed

    DIODE SCHOTTKY 1.2KV 8A TO252-2. Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 7.5A

  • BAT 64 B5003

    Infineon Technologies

    DIODE SCHOTTKY 40V 120MA SOT23-3.

  • BAS 70 B5003

    Infineon Technologies

    DIODE SCHOTTKY 70V 70MA SOT23-3.

  • BAT 54 B5003

    Infineon Technologies

    DIODE SCHOTTKY 30V 200MA SOT23-3.

  • BAS 40 B5003

    Infineon Technologies

    DIODE SCHOTTKY 40V 120MA SOT23-3.

  • BAS 16 B5003

    Infineon Technologies

    DIODE GEN PURP 80V 250MA SOT23-3.