Toshiba Semiconductor and Storage - CUHS10F60,H3F

KEY Part #: K6449061

CUHS10F60,H3F Pricing (USD) [1198992PC Stock]

  • 1 pcs$0.03085

Nimewo Pati:
CUHS10F60,H3F
Manifakti:
Toshiba Semiconductor and Storage
Detaye deskripsyon:
SMALL-SIGNAL SCHOTTKY BARRIER DI. Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Tiristors - SCR - Modil yo, Diodes - Rèkteur - Arrays, Transistors - JFETs, Tiristors - TRIACs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolè (BJT) - Arrays, Transistors - Bipolè (BJT) - Single and Transistors - Pwogramasyon Unijunction ...
Avantaj konpetitif:
We specialize in Toshiba Semiconductor and Storage CUHS10F60,H3F electronic components. CUHS10F60,H3F can be shipped within 24 hours after order. If you have any demands for CUHS10F60,H3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CUHS10F60,H3F Atribi pwodwi yo

Nimewo Pati : CUHS10F60,H3F
Manifakti : Toshiba Semiconductor and Storage
Deskripsyon : SMALL-SIGNAL SCHOTTKY BARRIER DI
Seri : -
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 60V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : -
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 40µA @ 60V
Kapasite @ Vr, F : 130pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : 2-SMD, Flat Lead
Pake Aparèy Founisè : US2H
Operating Tanperati - Junction : 150°C (Max)

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