Nimewo Pati :
SICR10650CT
Manifakti :
SMC Diode Solutions
Deskripsyon :
DIODE SCHOTTKY SILICON CARBIDE S
Kalite dyòd :
Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) :
650V
Kouran - Mwayèn Rèktifye (Io) :
5A
Voltage - Forward (Vf) (Max) @ Si :
1.7V @ 5A
Vitès :
No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) :
0ns
Kouran - Fèy Reverse @ Vr :
60µA @ 650V
Mounting Kalite :
Through Hole
Pake Aparèy Founisè :
TO-220AB
Operating Tanperati - Junction :
-55°C ~ 175°C