Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 125V 500MA DO35
Voltage - DC Ranvèse (Vr) (Max) :
125V
Kouran - Mwayèn Rèktifye (Io) :
500mA
Voltage - Forward (Vf) (Max) @ Si :
1V @ 200mA
Vitès :
Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
1µs
Kouran - Fèy Reverse @ Vr :
5nA @ 100V
Kapasite @ Vr, F :
8pF @ 0V, 1MHz
Mounting Kalite :
Through Hole
Pake / Ka :
DO-204AH, DO-35, Axial
Pake Aparèy Founisè :
DO-35
Operating Tanperati - Junction :
175°C (Max)