Manifakti :
ON Semiconductor
Deskripsyon :
DIODE GEN PURP 200V 4A AXIAL
Voltage - DC Ranvèse (Vr) (Max) :
200V
Kouran - Mwayèn Rèktifye (Io) :
4A
Voltage - Forward (Vf) (Max) @ Si :
890mV @ 4A
Vitès :
Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) :
35ns
Kouran - Fèy Reverse @ Vr :
5µA @ 200V
Mounting Kalite :
Through Hole
Pake / Ka :
DO-201AA, DO-27, Axial
Pake Aparèy Founisè :
Axial
Operating Tanperati - Junction :
-65°C ~ 175°C