Vishay Semiconductor Diodes Division - BYG10Y-E3/TR3

KEY Part #: K6439845

BYG10Y-E3/TR3 Pricing (USD) [557770PC Stock]

  • 1 pcs$0.06631
  • 7,500 pcs$0.06010
  • 15,000 pcs$0.05595

Nimewo Pati:
BYG10Y-E3/TR3
Manifakti:
Vishay Semiconductor Diodes Division
Detaye deskripsyon:
DIODE AVALANCHE 1.6KV 1.5A. Rectifiers 1.5 Amp 1600 Volt
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Tiristors - SCR - Modil yo, Transistors - Bipolè (BJT) - Single, Modil pouvwa chofè, Transistors - Bipolè (BJT) - Arrays, Pre-partial, Diodes - Zener - Arrays, Transistors - Pwogramasyon Unijunction and Tiristors - DIACs, SIDACs ...
Avantaj konpetitif:
We specialize in Vishay Semiconductor Diodes Division BYG10Y-E3/TR3 electronic components. BYG10Y-E3/TR3 can be shipped within 24 hours after order. If you have any demands for BYG10Y-E3/TR3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10Y-E3/TR3 Atribi pwodwi yo

Nimewo Pati : BYG10Y-E3/TR3
Manifakti : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 1.6KV 1.5A
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 1600V
Kouran - Mwayèn Rèktifye (Io) : 1.5A
Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 1.5A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 4µs
Kouran - Fèy Reverse @ Vr : 1µA @ 1600V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : DO-214AC, SMA
Pake Aparèy Founisè : DO-214AC (SMA)
Operating Tanperati - Junction : -55°C ~ 150°C

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