Microsemi Corporation - JAN1N6629US

KEY Part #: K6449553

JAN1N6629US Pricing (USD) [4373PC Stock]

  • 1 pcs$9.95367
  • 100 pcs$9.90415

Nimewo Pati:
JAN1N6629US
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
DIODE GEN PURP 880V 1.4A D5B. Rectifiers Rectifier
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Modil yo, Diodes - Bridge rèktifikateur, Modil pouvwa chofè, Transistors - Pwogramasyon Unijunction, Diodes - RF, Tranzistò - Bipolè (BJT) - Single, Pre-partial, Transistors - Bipolè (BJT) - Arrays, Pre-partial and Transistors - Bipolè (BJT) - RF ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N6629US Atribi pwodwi yo

Nimewo Pati : JAN1N6629US
Manifakti : Microsemi Corporation
Deskripsyon : DIODE GEN PURP 880V 1.4A D5B
Seri : Military, MIL-PRF-19500/590
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 880V
Kouran - Mwayèn Rèktifye (Io) : 1.4A
Voltage - Forward (Vf) (Max) @ Si : 1.4V @ 1.4A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 50ns
Kouran - Fèy Reverse @ Vr : 2µA @ 880V
Kapasite @ Vr, F : 40pF @ 10V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : E-MELF
Pake Aparèy Founisè : D-5B
Operating Tanperati - Junction : -65°C ~ 150°C

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