Microsemi Corporation - APT50GR120JD30

KEY Part #: K6533687

APT50GR120JD30 Pricing (USD) [751PC Stock]

  • 20 pcs$15.08204

Nimewo Pati:
APT50GR120JD30
Manifakti:
Microsemi Corporation
Detaye deskripsyon:
IGBT 1200V 84A 417W SOT227.
Manufacturer's standard lead time:
Nan stok
Lavi etajè:
Yon ane
Chip Soti nan:
Hong Kong
RoHS:
Metòd peman:
Chemen chajman:
Kategori Fanmi yo:
KEY Composants Co., LTD se yon Distribitè Eleman Elektwonik ki ofri kategori pwodwi ki gen ladan: Transistors - IGBTs - Arrays, Transistors - Bipolè (BJT) - RF, Transistors - IGBTs - Modil yo, Transistors - FETs, MOSFETs - Arrays, Tiristors - TRIACs, Diodes - Bridge rèktifikateur, Transistors - IGBTs - Single and Modil pouvwa chofè ...
Avantaj konpetitif:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT50GR120JD30 Atribi pwodwi yo

Nimewo Pati : APT50GR120JD30
Manifakti : Microsemi Corporation
Deskripsyon : IGBT 1200V 84A 417W SOT227
Seri : -
Estati Pati : Active
Kalite IGBT : NPT
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 84A
Pouvwa - Max : 417W
Vce (sou) (Max) @ Vge, Ic : 3.2V @ 15V, 50A
Kouran - Cutoff Pèseptè (Max) : 1.1mA
Antre kapasite (Cies) @ Vce : 5.55nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : SOT-227-4
Pake Aparèy Founisè : SOT-227

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